Ohmic contacts to InP

Abstract

The problems involved in making Sn—Ag ohmic contacts to InP have been investigated. The technique of thin film epitaxy has been adapted so that the problems have largely boon overcome, resulting in high-quality ohmic contacts whose contact resistance is loss than the measurement error and whose barrier height is too low to be detected. These ohmic contacts were used for the contacts of InP Gunn oscillators, and efficiencies somewhat loss than 9% could be obtained, in agreement with theoretical predictions.