Abstract
Ohmic contacts of Au and Ag based Zn containing alloys on p-type Ga 0.47In 0.53As have been studied using intermediate layers of Ti and Ni, respectively. Low specific contact resistance in the order of 10 −5 Ωcm 2 are achieved. In case of AuZn alloy, the Ti intermediate metal layer causes higher contact resistances together with a worse contact morphology in contrast to Ni intermediate layers. However for AgZn contacts Ti adherent layers improve the contact resistances, especially for lower alloying temperatures. Moreover these contacts exhibit significant smoother interfaces as revealed by TEM micrographs. Thus AgZn contacts apply best to low resistive contacting of very thin p-layers forming e.g. the base of a ballistic device.
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