Abstract
Low-resistance ohmic contacts on Al/sub 0.59/Ga/sub 0.41/N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 /spl times/ 10/sup -5/ /spl Omega/-cm/sup 2/ was achieved using a pre-metallisation treatment of the surface in an SiCl/sub 4/ plasma with a self-bias voltage of -300 V in a reactive ion etching system.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
