Abstract
AbstractNonalloyed ohmic contacts with lateral dimensions in the sub‐100 nm range have been processed and characterized. The contacts are suitable for the fabrication of GaAs/AlGaAs nanocolumns designed in a ‘top down’ approach. They are realized on n‐type GaAs using a thin low‐temperature grown GaAs cap layer and Ti/Au metallization. For the lateral patterning of the nanoscaled ohmic contacts, electron‐beam lithography based on Hydrogen Silsesquioxan (HSQ) negative resist is used, followed by sputtering and plasma etching of the metals. The I –V characteristics show ohmic contact behavior and demonstrate the scaling of the proposed contacts down to 50 nm lateral dimension. The specific contact resistance is situated in the range of 1–2 × 10–5 Ω cm2. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
