Abstract
In this paper, the source contacts of three different SiC MOSFET power device dies have been investigated using TEM and EDX analysis before and after long-term isothermal heating at 300°C in air. The device type with Al-Ni based ohmic source contacts showed degradation of its contacts after only 24 hours, as indicated by the EDX analysis. The other two device types with Ti-based source contacts and Al-Ni-based with a carbon layer were found to be thermo-mechanically stable. An XRD analysis was also carried out on the backside drain contact of the first device type in order to try to identify a new layer within the associated metal stack that had appeared during aging.
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