Abstract
In this letter, an off-state stress is proposed to simulate the operation conditions of switching polycrystalline thin-film transistors in active-matrix displays for the first time. A dynamic hot carrier (HC) effect, dependent on data pulse falling time, dominates the device degradation. Incorporated with the transient simulations, the device degradation mechanism is tentatively discussed. Finally, a bridged-grain structure, which can effectively shares the stress voltage drop via multiple reverse junctions, is employed to relieve such off-state-stress-induced dynamic HC degradation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
