Abstract
An off-state two-terminal gate-drain current model has been proposed to investigate the breakdown phenomenon for δ-doped high electron mobility transistors (δ-HEMTs) with a high Schottky barrier. The proposed model is based on the integrated mechanisms of thermionic-field emission theory for gate-barrier tunneling and impact ionization multiplication within the channel regime by self-consistently solving the 2-D Poisson equation. Explicit mathematical expressions have been derived to provide an efficient estimation of breakdown criteria and illustrations of sophisticated breakdown characteristics. Calculations of breakdown criteria for δ-HEMTs with a high Schottky barrier, including Au/In0.49Ga0.51P and Au/In0.34Al0.66As0.85Sb0.15, have also been verified and discussed. This model is suitable for the implementation of computer-aided design (CAD) design tools.
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