Abstract
This paper used optical emission spectroscopy (OES) to study the gas phase in high power DC arc plasma jet chemical vapour deposition (CVD) during diamond films growth processes. The results show that all the deposition parameters (methane concentration, substrate temperature, gas flow rate and ratio of H2/Ar) could strongly influence the gas phase. C2 is found to be the most sensitive radical to deposition parameters among the radicals in gas phase. Spatially resolved OES implies that a relative high concentration of atomic H exists near the substrate surface, which is beneficial for diamond film growth. The relatively high concentrations of C2 and CH are correlated with high deposition rate of diamond. In our high deposition rate system, C2 is presumed to be the main growth radical and CH is also believed to contribute the diamond deposition.
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