Abstract
In this paper, we report on the occurrence of Zero Gate Oxide Thickness Coefficient (ZToxC) in junctionless transistors. It is shown that due to bipolar effects, drain current increases with an increase in oxide thickness up to a certain gate voltage (VZToxC), whereas beyond (VZToxC), current follows the conventional transistor theory and reduces with an increment in gate oxide thickness. These two different trends lead to a condition of drain current being independent of oxide thickness at the gate bias corresponding to VZToxC. The occurrence of ZToxC classifies the predominant conduction mechanism into bipolar or unipolar mode in junctionless transistors.
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