Abstract
The occupancy of dangling bond defects in doped hydrogenated amorphous silicon is examined using a combination of electron spin resonance, sub-bandgap absorption, and transport measurements. A corrected value of U = +0.2 eV (±0.1 eV) is obtained for the dangling bond correlation energy in state-of-the-art material. The importance of potential fluctuations caused by inhomogeneous defect distributions is demonstrated for the case of boron doping in non-optimized samples.
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