Abstract
A selectively oxidised InGaAsN/GaAs three quantum well vertical cavity laser (VCSEL) demonstrated continuous wave (CW) lasing with a singlemode output power of 0.749 mW at 1266 nm. This is the first reported InGaAsN VCSEL capable of meeting the power and wavelength requirements for both OC-48 SR and OC-48 IR-1 compliant links. The VCSEL uses two low absorption n-type GaAs/AlGaAs distributed Bragg reflectors and a tunnel junction to achieve current injection into the active region. A multimode version of the VCSEL had a output power of 1.43 mW at 1.26 µm. CW lasing continued up to temperatures as high as 107°C. The VCSEL material was grown by solid source molecular beam epitaxy with an RF nitrogen plasma source.
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