Abstract
This study is aimed at creating memristor elements based on TiO2/TiOx layers with electrodes that do not contain noble and rare-earth metals, by vacuum deposition method. The characteristics of these elements analyzed by voltammetric methods show that the appearance of an N-type region of negative differential resistance on the current–voltage curve can be caused only by metal electrodes whose vacuum work function exceeds that of TiO2. The appearance of the N-type region on the current–voltage curve of a memristor element is possible only after electrically assisted vacuum forming. Mo–TiO2/TiOx–Ni/Cu structures, for which the ILR/IHR ratio reaches two orders of magnitude at a voltage of less than 4 V, have the most stable parameters.
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