Abstract
Frequency-dependent capacitance-voltage spectroscopy was applied to investigate the carrier transport dynamics in a silicon nanodots resonant tunneling device structure. Two negative differential resistance (NDR) regions in the current-voltage characteristics were found in this investigated structure. Two anomalous regions were also found in the capacitance-voltage spectroscopy, which coincide with the NDR regions in the current-voltage characteristics. The origin of the anomalous phenomenon was attributed to the mesoscopic quantum capacitance due to the holes transport through the energy states associated with the Si nanodots. An equivalent circuit model was proposed to quantitatively evaluate the frequency dependence of the capacitance-voltage spectroscopy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
