Abstract
We have achieved a very high conversion efficiency of 21·5% in HIT cells with a size of 100·3 cm2. One of the most striking features of the HIT cell is its high open-circuit voltage Voc, in excess of 710 mV. This is due to the excellent surface passivation at the a-Si/c-Si heterointerface realized by Sanyo's successful technologies for fabricating high-quality a-Si films and solar cells with low plasma damage processes. We have studied ways to treat the surface to produce a good interface throughout our fabrication processes. We have also investigated the deposition conditions of a-Si layers for optimizing the barrier height for the minority carriers in the heterojunction. Our approach for obtaining HIT cells with a high Voc is reviewed here. Copyright © 2005 John Wiley & Sons, Ltd.
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