Abstract
We have carried out scanning tunneling microscopy (STM) observations of unreconstructed regions on quenched Si(1 1 1) surfaces at 380°C at a scanning speed of 1.7 s per frame. In the regions, it is found that single faulted-halves of the dimer-adatom-stacking-fault (DAS) structure are formed isolatedly or at the edges of the surrounding DAS domains sharing one corner hole. In such “living” regions, we have succeeded to observe sudden structural changes of the faulted-halves during line scans in single frames of STM images.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.