Abstract

We deposited the CeO2 insulating films on the clean surfaces of the (Bi,Pb)-Sr-Ca-Cu-0 (BSCCO) single crystals at various substrate temperatures (Tsub), and observed the growth modes of the films by a reflection high-energy electron diffraction (RHEED). The RHEED patterns indicated that the 10A CeO2 thin films grew in an amorphous form including an epitaxial island form at Tsub=room temperature (RT) and grew in an epitaxial island form at Tsub=300° C. From the X-ray photoelectron spectroscopy results, we found that the interface of the CeO2/BSCCO specimens prepared at Tsub=RT was more abrupt than that at Tsub=300° C.

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