Abstract
Post-implantation annealing of ion-damaged, highly oriented pyrolytic graphite has been studied by Raman spectroscopy, ion-channeling techniques, and transmission electron microscopy. Complementary information obtained by these methods provides confirmation for the first step of graphitization of ion-damaged graphite at annealing temperatures of \ensuremath{\sim}2300\ifmmode^\circ\else\textdegree\fi{}C. This is manifested by the formation of carbon planes with two-dimensional ordering but no correlation in the third ($c$-axis) dimension.
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