Abstract
The Si(111)-7×7 reconstructed surface and fullerene (C60) molecules deposited on Si(111)-7×7 reconstructed surface were investigated by using a new technique called non-contact scanning nonlinear dielectric microscopy (NC-SNDM) under ultra-high vacuum conditions. A local atomic electric dipole moment distribution of Si atoms on Si(111)-7×7 reconstructed surface was resolved. This is the first successful demonstration of direct atomic dipole moment observation achieved in the field of capacitance measurement. Furthermore, both topography and induced electric dipole moment of individual C60 molecules as well as internal structure of the C60 molecule were successfully resolved with atomic-scale resolution. The NC-SNDM technique can yield the internal structure of the C60 molecule and the position where the charge transfer of the C60 molecules occurs on the Si(111)-7×7 reconstructed surface.
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