Abstract
Oxygen-adsorption on a Si(100)-2 × 1 surface is investigated by using non-contact scanning nonlinear dielectric microscopy (NC-SNDM). On the Si(100)-2 × 1 surface exposed to oxygen (O2) gas at room temperature, several variations in atomic configuration and electric dipole moment of dimers are observed. Models are proposed for oxygen adsorption which are consistent with the topographies and electric dipole moment distributions obtained by NC-SNDM.
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