Abstract
Observation of the ideal single time constant generation-recombination noise spectrum is achieved over four decades of frequency and five decades of noise power for the first time by completely depleting the electrons and holes in the semiconductor substrate with a high electric field. The measured time constant provides another accurate datum of the thermal emission rate of electrons and holes. By decreasing the applied electric field, nonideal power spectra result whose characteristic frequency increases due to the presence of electrons and holes in the silicon substrate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
