Abstract
Magnetophonon resonance observed at high electric and magnetic fields in thin n + nn + GaAs structure is shown to be well explained in terms of electric field induced inelastic inter-Landau-level scattering (IILLS). Splitting and inversion of the resonance peaks observed at high electric fields are explained by theoretical analysis of magnetoconductivity σ x x based on Kubo formula. The general oscillatory structure of the magnetoconductivity is given by
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