Observation of temperature-insensitive emission wavelength in GaInAs strained multiple-quantum-wire heterostructures

Abstract

We report on the photoluminescence (PL) properties of GaxIn1−xAs strained multiple-quantum-wire (MQWR) heterostructures formed in situ by the strain-induced lateral-layer ordering (SILO) process. Samples with moderately strained MQWR active regions demonstrate a negligible variance in emitted PL spectra with respect to temperature. The net temperature dependence of PL wavelength for these samples is less than 0.1 Å/°C between 77 and 300 K. For MQWR samples with stronger lateral composition modulation, the PL peak wavelength blue shifts with increasing temperature. The SILO process induced multiaxial strain in the (GaAs)2/(InAs)2.2 short-period-superlattice active region is responsible for this temperature insensitivity and blueshift of PL wavelength with temperature.