Abstract
The conduction band discontinuity for n-N isotype In0.5Ga0.5P/Al0.43Ga0.57As heterostructure grown on (100) GaAs substrate by liquid phase epitaxy was measured by the capacitance-voltage profiling method. The composition of each ternary was determined by photoluminescence and double-crystal x-ray diffraction measurement. The measurement of conduction band discontinuity shows staggered band lineup with both bands of In0.5Ga0.5P above those of Al0.43Ga0.57As, and the calculated conduction-band discontinuity ΔEc and the fixed interface charge density σi are 157 meV and −3×1010 cm−2, respectively. The nonoptimized fabrication of the light emitting devices with AlGaAs/InGaP/AlGaAs double heterostructure can be explained by the staggered band lineup of In0.5Ga0.5P/AlxGa1−xAs heterointerface for x(AlAs)≳0.43.
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