Abstract
We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 µm electron-heavy hole excitons at room temperature is obtained to be 27–54 ps for an excitation power of 20–100 mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir–Aronov–Pikus process at room temperature.
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