Abstract
Atomic force microscopy (AFM) was used to study the microstructure of short-wavelength recorded pits in GeSb 2Te 4 phase change thin film. Microarea morphology images show that the recorded domain bulges after laser irradiation. With the increase of writing pulse width, a depression appears in the center of the recorded pits. It is demonstrated that AFM is a very useful tool to evaluate the recorded pits and improve the performance of phase change media.
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