Abstract
GeSb<SUB>2</SUB>Te<SUB>4</SUB> phase change thin film was prepared by rf- magnetron sputtering method. Atomic force microscopy (AFM) was used to study the micro-structure of short-wavelength recorded spots. Microarea morphology images show that the recorded domain bulge after laser irradiation. With the increasing of writing pulse width, depression appears in the center of recorded spot. It is demonstrated that AFM is a very useful tool to evaluate the recorded spots and improve the performance of phase change media.
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