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Abstract
Hole resonant tunnelling through the quantum well of an AlAs/GaAs/AlAs double-barrier diode grown on a (110) oriented substrate is reported. Fewer resonances are observed in the current - voltage characteristic of the device than in the characteristics of similar devices grown on (100) and (311)A oriented substrates. High magnetic fields have been used to examine the anisotropy of the energy-wavevector dispersion relations of the quantum well valence subbands of the (110) device. The dispersion of one of the resonances is found to be much greater than has been observed in (100) and (311)A oriented devices.
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