Observation of radiation effects on three-dimensional optical random-access-memory materials for use in radiation dosimetry

Abstract

The first experimental investigation has been performed of radiation effects on three-dimensional optical random-access-memory materials. Thin films of poly(methyl methacrylate) doped with spirobenzopyran were irradiated with uniform fluxes of protons, α-particles and 12C +3 ions, at fixed energies per nucleon from 0.5 to 2.5 MeV and fluences from 10 10 to 10 14 cm −2. The exposed films were examined under a confocal laser scanning microscopy system which is capable of optically sectioning the materials. The irradiation resulted in a permanent change in the materials from a nonfluorescent form to a form which is fluorescent under both 488 and 514 nm excitation. Profiles were measured of fluorescent intensity versus depth, and of intensity versus dose. It was found that both the particle energy and the dose can be obtained from measuring the width of the depth profile and the fluorescent intensity. These properties are very promising for dosimetry applications since they allow calculation of an accurate dose equivalent.