Year-end Sale % OFF 
Abstract
We present the first observation of resolved quantum dot levels produced by strain modulation of a semiconductor. Excitons are confined in lateral potential wells of up to 60 meV, the largest yet reported for strain-induced quantum wire or dot structures. The dependence of the quantum dot level separation on dot size is in agreement with calculations of the strain-induced band edge modulation. For 200 nm wide carbon dot stressors the level separations are approximately 2 meV. Frustration of acceptor recombination by three-dimensional localization of carriers in the strain-induced potential wells is clearly observed. Finally, we detect luminescence from a single quantum dot at low excitation intensity, a result of the frustration of nonradiative recombination by localization.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
