Observation of Power MOSFET Composed of Silicon Carbide with a Planar Type in the Voltage Applying State Using a Scanning Probe Microscope

Abstract

We have developed a scanning probe microscope to evaluate the device with high spatial resolution in a power semiconductor device with a voltage applied. Specifically, we observed the cross sectional structure exposed SiC planar MOS-FET using a multifunctional probe microscope, which combines atomic force microscopy, Kelvin probe force microscopy, and scanning capacitance force microscopy. By observing the channel formation and carrier concentration change in response to the applied voltage, we were able to visualize the internal state of the SiC power MOSFET.