Abstract
We report short carrier lifetimes for GaAs/AlGaAs isolated single quantum wells (35, 50, and 90Å) grown via molecular beam epitaxy at 630°C. Photoluminescence (PL) measured at 14–150K show defect transitions that significantly thermalize at ~77K. Carrier lifetimes of the quantum wells, measured via time-resolved PL (TRPL), are ~21ps (35Å), ~39ps (50Å) and ~48ps (90Å). Carrier lifetimes and fluence-dependence measurements suggest that at 77K where the shallow levels have thermalized, deeper level defects are still present and act as effective carrier traps. The defect density appears to vary inversely with well-width, and this observed behavior is explained on the basis of interface roughness.
Published Version
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