Abstract
We report the observation of persistent photoconductivity (PPC) effect in 2H-MoSe2 layered semiconductors. The decay behavior of PPC can be well described by a stretch-exponential function. Experimental results indicate that the lattice relaxation of DX-like impurity is responsible for PPC in MoSe2. In addition, the small capture barrier created by lattice relaxation and the temperature-dependent resistance measurement exhibit that the magnitude of PPC effect in MoSe2 is small, consistent with the PPC behavior in indirect gap materials.
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