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Abstract
Channeling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c protons with an angular spread much narrower than the critical channeling angle. Particle dechanneling due to multiple scattering on the atomic nuclei of the crystal was observed and its dechanneling length was measured to be about 1.5 mm. For a crystal with length comparable to such dechanneling length, an efficiency of 83.4% was recorded, which is close to the maximum value expected for a parallel beam and exceeds the previously known limitation of deflection efficiency for long crystals.
Highlights
Channeling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c protons with an angular spread much narrower than the critical channeling angle
For a crystal with length comparable to such dechanneling length, an efficiency of 83.4% was recorded, which is close to the maximum value expected for a parallel beam and exceeds the previously known limitation of deflection efficiency for long crystals
High-energy charged particles entering the crystal with angles relative to the crystal planes smaller than the critical channeling angle θc = (2U0/p v)1/2, where p, v are the particle momentum and velocity and U0 the well depth of the crystal potential averaged along the planes, can be captured into the channeling regime [1]
Summary
Channeling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c protons with an angular spread much narrower than the critical channeling angle. Collisions with atomic electrons and nuclei of the crystal change the transverse energies of particles and as a result they leave the channels (dechanneling). The measured value Ld, which characterizes the channeled fraction reduce with the beam penetration depth into the crystal, gives the electronic dechanneling length because Ld = Le + Ln ≈ Le. For 400-GeV/c protons in straight (110) silicon crystal Le should be about 20 cm according to the extrapolation of the available data [7].
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