Abstract
We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5, and 14.0 GeV with a crystal with bending radius of 0.15 m, corresponding to curvatures of 0.053, 0.066, 0.099, 0.16, and 0.22 times the critical curvature, respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission, and the widths of the distribution of channeled particles parallel and orthogonal to the plane.
Highlights
Channeling in bent crystals has been thoroughly studied for protons with the purpose of, e.g., proton extraction at accelerator facilities [1,2,3] and for collimation [4,5,6]
Understanding the dynamics of the electron motion in a bent crystal is important both for the application of bent crystals, and in order to obtain a better understanding of the dynamics in e.g. crystalline undulators
We have shown that a fitting procedure based on (1) a simple exponential decay model of channeled particles and (2) that these particles are distributed according to a Gaussian distribution within the channel, fit the data with good agreement
Summary
Channeling in bent crystals has been thoroughly studied for protons with the purpose of, e.g., proton extraction at accelerator facilities [1,2,3] and for collimation [4,5,6]. Much less is known about the efficiency of channeling of electrons in bent crystals. In this paper we present a quantitative investigation of channeling and related phenomena in a strongly bent silicon crystal. The ordered structure of the crystal lattice gives unique access to electromagnetic field strengths otherwise experimentally inaccessible [7] which can be manipulated by e.g. bending of the crystal, as in this experiment, or otherwise inducing a strain in the crystal as exploited in certain new types of crystalline undulators [8,9,10,11,12,13]. Understanding the dynamics of the electron motion in a bent crystal is important both for the application of bent crystals, and in order to obtain a better understanding of the dynamics in e.g. crystalline undulators.
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