Abstract
The structural properties and surface bonding configuration of InN layers grown by high-pressure chemical vapor deposition have been characterized using Raman spectroscopy, x-ray diffraction (XRD), and high resolution electron energy loss spectroscopy. The appearance of the A1(TO) mode at 447 cm−1 in unpolarized z(·)z− Raman spectrum indicates distortions in the crystal lattice due to the growth of tilted plane crystallites. A Bragg reflex in the x-ray diffraction spectrum at 2Θ ≈ 33° has been assigned to tilted InN facets in the polycrystalline InN layer. The high resolution electron energy loss spectrum for this InN layer features vibration modes assigned to NH2 species indicating a surface orientation consistent with the crystalline properties observed in Raman spectroscopy and XRD. The appearance of tilted planes is suggested to be due to the effects of high V–III ratio and lattice mismatch on the growth mechanism.
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