Abstract
Porous nanocrystalline films were prepared by stain etching and subsequent annealing in hydrogen at 600 °C. The structural properties of the as-etched and annealed films were investigated using Raman scattering and various X-ray techniques. It was shown that the as-etched film had a thickness of ∼2 μm and consisted of two sublayers of different porosity and amorphous-like microstructure The annealing did not change essentially the porosity and thickness but resulted in notable crystallinity transformation. The results of Raman spectroscopy and X-ray measurements and modelling revealed the presence of germanium nanocrystals with mean sizes of about 8-10 nm in the annealed films.
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