Abstract
Interface structures of cubic-GaN on GaAs and 3C-SiC substrates grown by gas-source molecular beam epitaxy using NH 3 plasma were examined by high resolution transmission electron microscopy. There is no intermediated layer at the interface for both the structures. It was found that there are pyramid-like structures formed by (111) facets at cubic-GaN GaAs interfaces and its interface is fairly rough. On the contrary, interfaces of cubic-GaN 3 C-SiC are quite flat without specific structures, which results in good quality GaN epilayers.
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