Abstract
We have observed luminescence due to excitons bound to EL2 in its metastable state in both semi-insulating and n-type liquid-encapsulated Czochralski-grown GaAs. This luminescence appears at pressures, generated in a sapphire anvil cell, exceeding 3 kbar. An unexpected, drastic Fermi-level change quenches this luminescence at 10 kbar with commensurate changes in the deep EL2 luminescence.
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