Observation of Low-Energy Proton Direct Ionization in a 72-Layer 3-D NAND Flash Memory

Abstract

Single-event upsets are observed in a 72-layer 3-D NAND flash memory operated in a single-level cell mode after low-energy proton (500 keV-1.2 MeV) and heavy-ion irradiation. The layer-by-layer error count is analyzed to visualize the stopping of low-energy protons within the memory stack, and Monte Carlo simulations are correlated with the experimental data. Direct ionization by low-energy protons is identified by 3-D data analysis and the energy dependence of device-sensitive cross section. Heavy-ion data is also presented for comparison.