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Abstract
We studied the change in the 3d-shell configurations of Fe in B-doped Si under illumination by electron spin resonance (ESR) measurement. ESR signals originating from Fei+(3d7) and Fei0(3d8) were observed in Fe- and B-doped Si. The ESR signal of Fei+(3d7) disappeared and the signal intensity of Fei0(3d8) increased under illumination. These changes of the ESR signals under illumination were caused by the change in the charge state from Fei+(3d7) to Fei0(3d8) due to the capture of an electron. Subsequently, the process of recovery from Fei0(3d8) to Fei+(3d7) due to the capture of a hole was observed after the light was turned off. We found that the relaxation time from Fei0(3d8) to Fei+(3d7) was approximately 30 s at 8 K. This was much longer than the lifetime of a free hole.
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