Abstract
Buried oxide layers locally formed by oxygen implantation in silicon were analyzed by Rutherford backscattering with a 1.5 MeV He+ microprobe. Lateral and cross-sectional images of O and Si atoms in the buried oxide layers could be successfully obtained by scanning the microprobe over the sample. The Si images showed better contrasts than the O images. A process-failure region was detected by RBS mapping images.
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