Abstract
Self-assembled lateral quantum wells in alloys of AlInAs, epitaxially deposited by metal–organic chemical vapor deposition on InP, are studied by transmission electron microscopy, modulation spectroscopy, and photoluminescence. Under particular growth conditions, the growth of a homogeneous layer results in the spontaneous self-assembly of a sequence of quantum wells with quantization axes oriented along the [110] direction. With respect to a homogeneous alloy of similar average composition, the band gap reduction observed is as large as 360 meV. A polarization anisotropy exceeding 90% is observed for the lowest energy transition and a large valence band splitting of 139 meV separates the heavy- and light-hole-like valence bands.
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