Abstract
Commercially available, Czochralski-grown (CZ), phosphorus- and boron-doped (100) silicon wafers have been characterized by capacitance-voltage and deep-level transient spectroscopy measurements of Schottky diodes. Two electron traps labelled A1 (Ec-0.10 eV) and A2 (Ec-0.13 eV) are commonly observed in n-type wafers with a concentration around 1011 cm-3. These correspond to the hydrogen-related complexes previously reported. A decrease of carrier concentration occurs near the surface in p-type wafers. This is ascribed to the passivation of boron acceptors by hydrogen. These results indicate that hydrogen is incorporated near the surface in commercial CZ silicon wafers.
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