Abstract
III-nitride microdisks with InGaN multiple quantum well active regions were fabricated using photoelectrochemical etching. The microdisks were thin, mushroom-shaped devices with smooth undercut surfaces. High quality optical modes were observed. A focused ion beam was used to further polish the microdisk sidewalls, as well as to study the effect of ion damage to the gain region of the microdisk. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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