Abstract
The objective of this study was to determine detailed microstructure of a Ni1–xPtxSi film formed via a melting/quenching process using high temperature laser annealing on a Si(001) substrate. The orthorhombic Ni1–xPtxSi film was found to be able to epitaxially grow with a crystallographic relationship of Ni1–xPtxSi[010]//Si[110], Ni1–xPtxSi(400)//Si(33¯1), and Ni1–xPtxSi (104)//Si(004). Volume expansion of the Ni1–xPtxSi film due to Pt incorporation was mainly accommodated by an increase in only one direction nearly parallel to the film surface (lattice parameter a). This was explained by the minimum coherent strain at the Ni1–xPtxSi (104)/Si(004) interface with an epitaxial growth tendency. Atomic-scale scanning transmission electron microscopy analyses revealed that the interface of Ni1–xPtxSi/Si had a repetitive atomic-step feature with energetically favorable Ni1–xPtxSi(004) terraces and (400) structural ledges that could increase the coherent area. By generating an array of misfit dislocations with an extra half plane of Ni1–xPtxSi(020), the elastic strain was further relieved.
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