Observation of Half-Integer Quantum Hall Effect in Single-Layer Graphene Using Pulse Magnet

Abstract

We report on the magnetotransport measurement on a single-layer graphene in pulsed magnetic fields up to B = 53 T. With either electron- or hole-type charge carriers, the Hall resistance R H is quantized into R H = ( h / e 2 )ν -1 with ν= ±2, ±6, and ±10, which demonstrates the observation of a half-integer quantum Hall effect (QHE). At B = 50 T, the half-integer QHE is even observed at room temperature in spite of a conventional carrier mobility µ= 4000 cm 2 V -1 s -1 .