Abstract
We present photoluminescence (PL) studies of Cl-doped Zn 1− x Be x Se ( x=0–0.029) alloys performed in wide ranges of temperature (10– 296 K ) and of excitation intensities. We show that the high-temperature PL is characterized by a free-to-acceptor-type transition, involving shallow state of the localized holes. We shall show that similar transitions are also present in comparable undoped samples, but the PL intensity is substantially lower. Finally, we show that the ionization energy of the relevant acceptor-like species increases with Be concentration, suggesting an effective mass type defect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
