Abstract
In this work, we present photoluminescence (PL) and electroluminescence studies on thermal SiO 2 Si-implanted light-emitting devices (LEDs) containing crystallites of size 3 nm . The PL measurements reveal a bulk-type behavior of nc-Si-associated PL confirming that the PL obtained at ∼1.6 eV is closely related to Q-confined nc-Si. Analysis of electrical transport mechanisms confirms that the current is related to a tunneling process as expected and not to Fowler–Nordheim regime. Finally, threshold electric field for light emission obtained was as low as 5 MV/cm , confirming the real potential of a such Si-implanted material for LEDs based on Si.
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