Abstract
We report the observation of the field-driven blue shift at near absorption edge in the photo-current response spectra of δ-doped Si n–i–p–i multiple quantum wells due to the widening of the effective energy gap. This phenomenon differs from the observed results in GaAs/AlGaAs and GeSi/Si superlattices, because the physical mechanisms of forming energy band in these superlattice samples are different. Our experimental results are interpreted satisfactorily by the theoretical calculation.
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