Abstract
We have observed pronounced excitonic effects at room temperature near the E 0 transition (direct gap at k = 0) of GaAs, using the electrolyte electroreflectance technique. The large changes in the spectral lineshape are interference phenomena due to exciton quenching in the high electric fields of the space charge region. Support for this model is provided by an analysis of the lineshape variation, which is periodic in the width of the space charge region.
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